Found: products for your request ''
Show all results
No results found for your query. Try changing the search criteria.
Sign In
0
Home
About Us
Delivery and Payment
Contacts
Our Brands
Warehouse Stock
Home / Catalog / TME catalog / Semiconductors / Transistors / IGBT transistors and modules / IGBT transistors / THT IGBT transistors / GT50JR21

GT50JR21 - THT IGBT transistors

GT50JR21
Description

Transistor: IGBT; 600V; 49A; 230W; TO3PN

Specifications
Manufacturer TOSHIBA
Type of transistor IGBT
Collector-emitter voltage 600V
Collector current 49A
Power dissipation 230W
Case TO3PN
Gate-emitter voltage ±25V
Pulsed collector current 100A
Mounting THT
Kind of package tube
Turn-on time 430ns
Turn-off time 720ns
Features of semiconductor devices integrated anti-parallel diode
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat