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Home / Catalog / TME catalog / Semiconductors / Transistors / IGBT transistors and modules / IGBT transistors / THT IGBT transistors / GT40WR21

GT40WR21 - THT IGBT transistors

GT40WR21
Description

Transistor: IGBT; 1.8kV; 40A; 375W; TO3PN

Specifications
Manufacturer TOSHIBA
Type of transistor IGBT
Collector-emitter voltage 1.8kV
Collector current 40A
Power dissipation 375W
Case TO3PN
Gate-emitter voltage ±25V
Pulsed collector current 80A
Mounting THT
Kind of package tube
Turn-on time 950ns
Turn-off time 570ns
Features of semiconductor devices integrated anti-parallel diode
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Development and design: Seventh Cat