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Home / Catalog / TME catalog / Semiconductors / Transistors / IGBT transistors and modules / IGBT transistors / THT IGBT transistors / GT40QR21

GT40QR21 - THT IGBT transistors

GT40QR21
Description

Transistor: IGBT; 1.2kV; 35A; 230W; TO3PN

Specifications
Manufacturer TOSHIBA
Type of transistor IGBT
Collector-emitter voltage 1.2kV
Collector current 35A
Power dissipation 230W
Case TO3PN
Gate-emitter voltage ±25V
Pulsed collector current 80A
Mounting THT
Kind of package tube
Turn-on time 0.3µs
Turn-off time 0.6µs
Features of semiconductor devices integrated anti-parallel diode
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Development and design: Seventh Cat