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Home / Catalog / TME catalog / Semiconductors / Transistors / IGBT transistors and modules / IGBT transistors / THT IGBT transistors / GT30J121Q

GT30J121Q - THT IGBT transistors

GT30J121Q
Description

Transistor: IGBT; 600V; 30A; 170W; TO3PN

Specifications
Manufacturer TOSHIBA
Type of transistor IGBT
Collector-emitter voltage 600V
Collector current 30A
Power dissipation 170W
Case TO3PN
Gate-emitter voltage ±20V
Pulsed collector current 60A
Mounting THT
Kind of package tube
Turn-on time 240ns
Turn-off time 430ns
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Development and design: Seventh Cat