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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / GT1K2N10I-GFS

GT1K2N10I-GFS - SMD N channel transistors

GT1K2N10I-GFS
Description

Транзистор: N-MOSFET; SGT; польовий; 100В; 3,3А; 1,6Вт; SOT23

Specifications
Manufacturer GOFORD SEMICONDUCTOR
Type of transistor N-MOSFET
Technology SGT
Polarisation unipolar
Drain-source voltage 100V
Drain current 3.3A
Power dissipation 1.6W
Case SOT23
Gate-source voltage ±20V
Mounting SMD
Gate charge 4.2nC
Kind of channel enhancement
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Development and design: Seventh Cat