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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / GT110N06S-GFS

GT110N06S-GFS - SMD N channel transistors

GT110N06S-GFS
Description

Transistor: N-MOSFET; SGT; unipolar; 60V; 14A; 3W; SOP8

Specifications
Manufacturer GOFORD SEMICONDUCTOR
Type of transistor N-MOSFET
Technology SGT
Polarisation unipolar
Drain-source voltage 60V
Drain current 14A
Power dissipation 3W
Case SOP8
Gate-source voltage ±20V
Mounting SMD
Gate charge 24nC
Kind of channel enhancement
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Development and design: Seventh Cat