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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / GAN041-650WSBQ

GAN041-650WSBQ - THT N channel transistors

GAN041-650WSBQ
Description

Transistor: N-JFET / N-MOSFET; GaN; unipolar; HEMT,cascode; 650V

Specifications
Manufacturer NEXPERIA
Type of transistor N-JFET / N-MOSFET
Technology GaN
Polarisation unipolar
Kind of transistor cascode
HEMT
Drain-source voltage 650V
Drain current 33.4A
Pulsed drain current 240A
Power dissipation 187W
Case SOT429
TO247
Gate-source voltage ±20V
On-state resistance 35mΩ
Mounting THT
Gate charge 22nC
Kind of package tube
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Development and design: Seventh Cat