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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / G7P03L-GFS

G7P03L-GFS - SMD P channel transistors

G7P03L-GFS
Description

Транзистор: P-MOSFET; Trench; польовий; -30В; -7А; 1,9Вт; SOT23

Specifications
Manufacturer GOFORD SEMICONDUCTOR
Type of transistor P-MOSFET
Technology Trench
Polarisation unipolar
Drain-source voltage -30V
Drain current -7A
Power dissipation 1.9W
Case SOT23
Gate-source voltage ±20V
Mounting SMD
Gate charge 29nC
Kind of channel enhancement
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Development and design: Seventh Cat