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Transistor: P-MOSFET; Trench; unipolar; -30V; -7A; 1.9W; SOT23
| Manufacturer |
GOFORD SEMICONDUCTOR |
| Type of transistor |
P-MOSFET |
| Technology |
Trench |
| Polarisation |
unipolar |
| Drain-source voltage |
-30V |
| Drain current |
-7A |
| Power dissipation |
1.9W |
| Case |
SOT23 |
| Gate-source voltage |
±20V |
| Mounting |
SMD |
| Gate charge |
29nC |
| Kind of channel |
enhancement |