G7P03L-GFS - SMD P channel transistors

G7P03L-GFS
Description

Transistor: P-MOSFET; Trench; unipolar; -30V; -7A; 1.9W; SOT23

Specifications
Manufacturer GOFORD SEMICONDUCTOR
Type of transistor P-MOSFET
Technology Trench
Polarisation unipolar
Drain-source voltage -30V
Drain current -7A
Power dissipation 1.9W
Case SOT23
Gate-source voltage ±20V
Mounting SMD
Gate charge 29nC
Kind of channel enhancement
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Development and design: Seventh Cat