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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / Multi channel transistors / G4953S-GFS

G4953S-GFS - Multi channel transistors

G4953S-GFS
Description

Transistor: P-MOSFET x2; Trench; unipolar; -30V; -5A; 1.6W; SOP8

Specifications
Manufacturer GOFORD SEMICONDUCTOR
Type of transistor P-MOSFET x2
Technology Trench
Polarisation unipolar
Drain-source voltage -30V
Drain current -5A
Power dissipation 1.6W
Case SOP8
Gate-source voltage ±20V
Mounting SMD
Gate charge 11nC
Kind of channel enhancement
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Development and design: Seventh Cat