G4616-GFS - Multi channel transistors

G4616-GFS
Description

Transistor: N/P-MOSFET; Trench; unipolar; 40/-40V; 8/-7A; 2/2.8W

Specifications
Manufacturer GOFORD SEMICONDUCTOR
Type of transistor N/P-MOSFET
Technology Trench
Polarisation unipolar
Drain-source voltage 40/-40V
Drain current 8/-7A
Power dissipation 2/2.8W
Case SOP8
Gate-source voltage ±20V
Mounting SMD
Gate charge 12/13nC
Kind of channel enhancement
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Development and design: Seventh Cat