G3R45MT17K - THT N channel transistors

G3R45MT17K
Description

Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 43A; Idm: 160A; 438W

Specifications
Manufacturer GeneSiC SEMICONDUCTOR
Type of transistor N-MOSFET
Technology G3R™
SiC
Polarisation unipolar
Drain-source voltage 1.7kV
Drain current 43A
Pulsed drain current 160A
Power dissipation 438W
Case TO247-4
Gate-source voltage -5...15V
On-state resistance 45mΩ
Mounting THT
Gate charge 182nC
Kind of package tube
Kind of channel enhancement
Features of semiconductor devices Kelvin terminal
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Development and design: Seventh Cat