G3R40MT12D - THT N channel transistors

G3R40MT12D
Description

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W

Specifications
Manufacturer GeneSiC SEMICONDUCTOR
Type of transistor N-MOSFET
Technology G3R™
SiC
Polarisation unipolar
Drain-source voltage 1.2kV
Drain current 50A
Pulsed drain current 140A
Power dissipation 333W
Case TO247-3
Gate-source voltage -5...15V
On-state resistance 40mΩ
Mounting THT
Gate charge 106nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat