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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / G3R350MT12D

G3R350MT12D - THT N channel transistors

G3R350MT12D
Description

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 16A; 74W

Specifications
Manufacturer GeneSiC SEMICONDUCTOR
Type of transistor N-MOSFET
Technology G3R™
SiC
Polarisation unipolar
Drain-source voltage 1.2kV
Drain current 8A
Pulsed drain current 16A
Power dissipation 74W
Case TO247-3
Gate-source voltage -5...15V
On-state resistance 0.35Ω
Mounting THT
Gate charge 12nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat