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Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 90A; Idm: 240A; 542W
| Manufacturer |
GeneSiC SEMICONDUCTOR |
| Type of transistor |
N-MOSFET |
| Technology |
G3R™ SiC |
| Polarisation |
unipolar |
| Drain-source voltage |
1.2kV |
| Drain current |
90A |
| Pulsed drain current |
240A |
| Power dissipation |
542W |
| Case |
TO247-4 |
| Gate-source voltage |
-5...15V |
| On-state resistance |
20mΩ |
| Mounting |
THT |
| Gate charge |
219nC |
| Kind of package |
tube |
| Kind of channel |
enhancement |
| Features of semiconductor devices |
Kelvin terminal |