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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / G3R160MT17D

G3R160MT17D - THT N channel transistors

G3R160MT17D
Description

Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 15A; Idm: 48A; 175W

Specifications
Manufacturer GeneSiC SEMICONDUCTOR
Type of transistor N-MOSFET
Technology G3R™
SiC
Polarisation unipolar
Drain-source voltage 1.7kV
Drain current 15A
Pulsed drain current 48A
Power dissipation 175W
Case TO247-3
Gate-source voltage -5...15V
On-state resistance 0.16Ω
Mounting THT
Gate charge 21nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat