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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / G370P10K-GFS

G370P10K-GFS - SMD P channel transistors

G370P10K-GFS
Description

Transistor: P-MOSFET; Trench; unipolar; -100V; -34A; 94W; TO252

Specifications
Manufacturer GOFORD SEMICONDUCTOR
Type of transistor P-MOSFET
Technology Trench
Polarisation unipolar
Drain-source voltage -100V
Drain current -34A
Power dissipation 94W
Case TO252
Gate-source voltage ±20V
Mounting SMD
Gate charge 98nC
Kind of channel enhancement
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Development and design: Seventh Cat