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Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 54W; TO263-7
| Manufacturer |
GeneSiC SEMICONDUCTOR |
| Type of transistor |
N-MOSFET |
| Technology |
G2R™ SiC |
| Polarisation |
unipolar |
| Drain-source voltage |
1.7kV |
| Drain current |
4A |
| Pulsed drain current |
8A |
| Power dissipation |
54W |
| Case |
TO263-7 |
| Gate-source voltage |
-5...20V |
| On-state resistance |
1Ω |
| Mounting |
SMD |
| Kind of package |
tube |
| Kind of channel |
enhancement |
| Features of semiconductor devices |
Kelvin terminal |