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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / G2312-GFS

G2312-GFS - SMD N channel transistors

G2312-GFS
Description

Transistor: N-MOSFET; Trench; unipolar; 20V; 5A; 1.25W; SOT23

Specifications
Manufacturer GOFORD SEMICONDUCTOR
Type of transistor N-MOSFET
Technology Trench
Polarisation unipolar
Drain-source voltage 20V
Drain current 5A
Power dissipation 1.25W
Case SOT23
Gate-source voltage ±12V
Mounting SMD
Gate charge 10.5nC
Kind of channel enhancement
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Development and design: Seventh Cat