G230P06T-GFS - THT P channel transistors

G230P06T-GFS
Description

Transistor: P-MOSFET; Trench; unipolar; -60V; -60A; 115W; TO220

Specifications
Manufacturer GOFORD SEMICONDUCTOR
Type of transistor P-MOSFET
Technology Trench
Polarisation unipolar
Drain-source voltage -60V
Drain current -60A
Power dissipation 115W
Case TO220
Gate-source voltage ±20V
Mounting THT
Gate charge 62nC
Kind of channel enhancement
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Development and design: Seventh Cat