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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / G230P06M-GFS

G230P06M-GFS - SMD P channel transistors

G230P06M-GFS
Description

Transistor: P-MOSFET; Trench; unipolar; -60V; -48A; 105W; TO263

Specifications
Manufacturer GOFORD SEMICONDUCTOR
Type of transistor P-MOSFET
Technology Trench
Polarisation unipolar
Drain-source voltage -60V
Drain current -48A
Power dissipation 105W
Case TO263
Gate-source voltage ±20V
Mounting SMD
Gate charge 62nC
Kind of channel enhancement
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Development and design: Seventh Cat