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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / Multi channel transistors / G200N03S2-GFS

G200N03S2-GFS - Multi channel transistors

G200N03S2-GFS
Description

Transistor: N-MOSFET x2; Trench; unipolar; 30V; 7A; 2W; SOP8

Specifications
Manufacturer GOFORD SEMICONDUCTOR
Type of transistor N-MOSFET x2
Technology Trench
Polarisation unipolar
Drain-source voltage 30V
Drain current 7A
Power dissipation 2W
Case SOP8
Gate-source voltage ±20V
Mounting SMD
Gate charge 9.5nC
Kind of channel enhancement
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Development and design: Seventh Cat