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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / G11S-GFS

G11S-GFS - SMD P channel transistors

G11S-GFS
Description

Transistor: P-MOSFET; Trench; unipolar; -20V; -11A; 3.3W; SOP8

Specifications
Manufacturer GOFORD SEMICONDUCTOR
Type of transistor P-MOSFET
Technology Trench
Polarisation unipolar
Drain-source voltage -20V
Drain current -11A
Power dissipation 3.3W
Case SOP8
Gate-source voltage ±12V
Mounting SMD
Gate charge 47nC
Kind of channel enhancement
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Development and design: Seventh Cat