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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / G10N10A-GFS

G10N10A-GFS - SMD N channel transistors

G10N10A-GFS
Description

Transistor: N-MOSFET; Trench; unipolar; 100V; 10A; 28W; TO252

Specifications
Manufacturer GOFORD SEMICONDUCTOR
Type of transistor N-MOSFET
Technology Trench
Polarisation unipolar
Drain-source voltage 100V
Drain current 10A
Power dissipation 28W
Case TO252
Gate-source voltage ±20V
Mounting SMD
Gate charge 15.5nC
Kind of channel enhancement
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Development and design: Seventh Cat