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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / THT P channel transistors / G080P06T-GFS

G080P06T-GFS - THT P channel transistors

G080P06T-GFS
Description

Transistor: P-MOSFET; Trench; unipolar; -60V; -195A; 294W; TO220

Specifications
Manufacturer GOFORD SEMICONDUCTOR
Type of transistor P-MOSFET
Technology Trench
Polarisation unipolar
Drain-source voltage -60V
Drain current -195A
Power dissipation 294W
Case TO220
Gate-source voltage ±20V
Mounting THT
Gate charge 186nC
Kind of channel enhancement
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Development and design: Seventh Cat