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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / G080N10T-GFS

G080N10T-GFS - THT N channel transistors

G080N10T-GFS
Description

Transistor: N-MOSFET; Trench; unipolar; 100V; 140A; 236W; TO220

Specifications
Manufacturer GOFORD SEMICONDUCTOR
Type of transistor N-MOSFET
Technology Trench
Polarisation unipolar
Drain-source voltage 100V
Drain current 140A
Power dissipation 236W
Case TO220
Gate-source voltage ±20V
Mounting THT
Gate charge 192nC
Kind of channel enhancement
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Development and design: Seventh Cat