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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / G02P06-GFS

G02P06-GFS - SMD P channel transistors

G02P06-GFS
Description

Транзистор: P-MOSFET; Trench; польовий; -60В; -1,6А; 1,5Вт; SOT23

Specifications
Manufacturer GOFORD SEMICONDUCTOR
Type of transistor P-MOSFET
Technology Trench
Polarisation unipolar
Drain-source voltage -60V
Drain current -1.6A
Power dissipation 1.5W
Case SOT23
Gate-source voltage ±20V
Mounting SMD
Gate charge 11.3nC
Kind of channel enhancement
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Development and design: Seventh Cat