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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / FQT7N10LTF

FQT7N10LTF - SMD N channel transistors

FQT7N10LTF
Description

Transistor: N-MOSFET; unipolar; 100V; 1.36A; 2W; SOT223

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology QFET®
Polarisation unipolar
Drain-source voltage 100V
Drain current 1.36A
Power dissipation 2W
Case SOT223
Gate-source voltage ±20V
On-state resistance 0.38Ω
Mounting SMD
Gate charge 6nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat