FQT4N20LTF - SMD N channel transistors

FQT4N20LTF
Description

Transistor: N-MOSFET; unipolar; 200V; 0.68A; 2.2W; SOT223

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology QFET®
Polarisation unipolar
Drain-source voltage 200V
Drain current 0.68A
Power dissipation 2.2W
Case SOT223
Gate-source voltage ±20V
On-state resistance 1.4Ω
Mounting SMD
Gate charge 5.2nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat