FQPF9N90CT - THT N channel transistors

FQPF9N90CT
Description

Transistor: N-MOSFET; unipolar; 900V; 2.8A; Idm: 32A; 68W; TO220FP

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 900V
Drain current 2.8A
Pulsed drain current 32A
Power dissipation 68W
Case TO220FP
Gate-source voltage ±30V
On-state resistance 1.4Ω
Mounting THT
Gate charge 58nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat