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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / FQP9N90C

FQP9N90C - THT N channel transistors

FQP9N90C
Description

Transistor: N-MOSFET; unipolar; 900V; 2.8A; 205W; TO220AB

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology QFET®
Polarisation unipolar
Drain-source voltage 900V
Drain current 2.8A
Power dissipation 205W
Case TO220AB
Gate-source voltage ±30V
On-state resistance 1.4Ω
Mounting THT
Gate charge 58nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat