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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / FQP6N80C

FQP6N80C - THT N channel transistors

FQP6N80C
Description

Transistor: N-MOSFET; unipolar; 800V; 3.2A; 158W; TO220AB

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology QFET®
Polarisation unipolar
Drain-source voltage 800V
Drain current 3.2A
Power dissipation 158W
Case TO220AB
Gate-source voltage ±30V
On-state resistance 2.5Ω
Mounting THT
Gate charge 30nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat