FQP17P06 - THT P channel transistors

FQP17P06
Description

Transistor: P-MOSFET; unipolar; -60V; -12A; 79W; TO220AB

Specifications
Manufacturer ONSEMI
Type of transistor P-MOSFET
Technology QFET®
Polarisation unipolar
Drain-source voltage -60V
Drain current -12A
Power dissipation 79W
Case TO220AB
Gate-source voltage ±25V
On-state resistance 0.12Ω
Mounting THT
Gate charge 27nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat