FQP11N40C - THT N channel transistors

FQP11N40C
Description

Transistor: N-MOSFET; unipolar; 400V; 6.6A; 135W; TO220AB

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology QFET®
Polarisation unipolar
Drain-source voltage 400V
Drain current 6.6A
Power dissipation 135W
Case TO220AB
Gate-source voltage ±30V
On-state resistance 530mΩ
Mounting THT
Gate charge 35nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat