FQD8P10TM - SMD P channel transistors

FQD8P10TM
Description

Transistor: P-MOSFET; unipolar; -100V; -4.2A; 44W; DPAK

Specifications
Manufacturer ONSEMI
Type of transistor P-MOSFET
Technology QFET®
Polarisation unipolar
Drain-source voltage -100V
Drain current -4.2A
Power dissipation 44W
Case DPAK
Gate-source voltage ±30V
On-state resistance 530mΩ
Mounting SMD
Gate charge 15nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat