FQD7P20TM - SMD P channel transistors

FQD7P20TM
Description

Transistor: P-MOSFET; unipolar; -200V; -3.6A; 55W; DPAK

Specifications
Manufacturer ONSEMI
Type of transistor P-MOSFET
Technology QFET®
Polarisation unipolar
Drain-source voltage -200V
Drain current -3.6A
Power dissipation 55W
Case DPAK
Gate-source voltage ±30V
On-state resistance 690mΩ
Mounting SMD
Gate charge 25nC
Kind of package reel
tape
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat