FQD7N20LTM - SMD N channel transistors

FQD7N20LTM
Description

Transistor: N-MOSFET; unipolar; 200V; 3.48A; Idm: 22A; 45W; DPAK

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 200V
Drain current 3.48A
Pulsed drain current 22A
Power dissipation 45W
Case DPAK
Gate-source voltage ±20V
On-state resistance 780mΩ
Mounting SMD
Gate charge 9nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat