FQD6N40CTM - SMD N channel transistors

FQD6N40CTM
Description

Transistor: N-MOSFET; unipolar; 400V; 2.7A; 48W; DPAK

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology QFET®
Polarisation unipolar
Drain-source voltage 400V
Drain current 2.7A
Power dissipation 48W
Case DPAK
Gate-source voltage ±30V
On-state resistance
Mounting SMD
Gate charge 20nC
Kind of package reel
tape
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat