FQD30N06TM - SMD N channel transistors

FQD30N06TM
Description

Transistor: N-MOSFET; unipolar; 60V; 14.3A; Idm: 90.8A; 44W; DPAK

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 60V
Drain current 14.3A
Pulsed drain current 90.8A
Power dissipation 44W
Case DPAK
Gate-source voltage ±25V
On-state resistance 45mΩ
Mounting SMD
Gate charge 25nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat