FQD1N80TM - SMD N channel transistors

FQD1N80TM
Description

Transistor: N-MOSFET; unipolar; 800V; 0.63A; 45W; DPAK

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology QFET®
Polarisation unipolar
Drain-source voltage 800V
Drain current 0.63A
Power dissipation 45W
Case DPAK
Gate-source voltage ±30V
On-state resistance 20Ω
Mounting SMD
Gate charge 7.2nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat