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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / FQD19N10LTM

FQD19N10LTM - SMD N channel transistors

FQD19N10LTM
Description

Transistor: N-MOSFET; unipolar; 100V; 9.8A; 50W; DPAK

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology QFET®
Polarisation unipolar
Drain-source voltage 100V
Drain current 9.8A
Power dissipation 50W
Case DPAK
Gate-source voltage ±20V
On-state resistance 0.11Ω
Mounting SMD
Gate charge 18nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat