FQD18N20V2TM - SMD N channel transistors

FQD18N20V2TM
Description

Transistor: N-MOSFET; unipolar; 200V; 9.75A; 83W; DPAK

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology QFET®
Polarisation unipolar
Drain-source voltage 200V
Drain current 9.75A
Power dissipation 83W
Case DPAK
Gate-source voltage ±30V
On-state resistance 0.14Ω
Mounting SMD
Gate charge 26nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat