FQD17P06TM - SMD P channel transistors

FQD17P06TM
Description

Transistor: P-MOSFET; unipolar; -60V; -7.6A; 44W; DPAK

Specifications
Manufacturer ONSEMI
Type of transistor P-MOSFET
Technology QFET®
Polarisation unipolar
Drain-source voltage -60V
Drain current -7.6A
Power dissipation 44W
Case DPAK
Gate-source voltage ±25V
On-state resistance 135mΩ
Mounting SMD
Gate charge 27nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat