FQD16N25CTM - SMD N channel transistors

FQD16N25CTM
Description

Transistor: N-MOSFET; unipolar; 250V; 10.1A; 160W; DPAK

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology QFET®
Polarisation unipolar
Drain-source voltage 250V
Drain current 10.1A
Power dissipation 160W
Case DPAK
Gate-source voltage ±30V
On-state resistance 0.27Ω
Mounting SMD
Gate charge 53.5nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat