FQD13N10LTM - SMD N channel transistors

FQD13N10LTM
Description

Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology QFET®
Polarisation unipolar
Drain-source voltage 100V
Drain current 6.3A
Power dissipation 40W
Case DPAK
Gate-source voltage ±20V
On-state resistance 0.2Ω
Mounting SMD
Gate charge 12nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat