FQD13N06LTM - SMD N channel transistors

FQD13N06LTM
Description

Transistor: N-MOSFET; unipolar; 60V; 7A; 28W; DPAK

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology QFET®
Polarisation unipolar
Drain-source voltage 60V
Drain current 7A
Power dissipation 28W
Case DPAK
Gate-source voltage ±20V
On-state resistance 0.145Ω
Mounting SMD
Gate charge 6.4nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat