FQD12N20LTM - SMD N channel transistors

FQD12N20LTM
Description

Transistor: N-MOSFET; unipolar; 200V; 5.7A; 55W; DPAK

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology QFET®
Polarisation unipolar
Drain-source voltage 200V
Drain current 5.7A
Power dissipation 55W
Case DPAK
Gate-source voltage ±20V
On-state resistance 0.32Ω
Mounting SMD
Gate charge 21nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat