FQD11P06TM - SMD P channel transistors

FQD11P06TM
Description

Transistor: P-MOSFET; unipolar; -60V; -5.95A; 38W; DPAK

Specifications
Manufacturer ONSEMI
Type of transistor P-MOSFET
Technology QFET®
Polarisation unipolar
Drain-source voltage -60V
Drain current -5.95A
Power dissipation 38W
Case DPAK
Gate-source voltage ±30V
On-state resistance 0.185Ω
Mounting SMD
Gate charge 17nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat