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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / FQB5N90TM

FQB5N90TM - SMD N channel transistors

FQB5N90TM
Description

Transistor: N-MOSFET; unipolar; 900V; 3.42A; 158W; D2PAK

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology QFET®
Polarisation unipolar
Drain-source voltage 900V
Drain current 3.42A
Power dissipation 158W
Case D2PAK
Gate-source voltage ±30V
On-state resistance 2.3Ω
Mounting SMD
Gate charge 40nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat