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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / FQB55N10TM

FQB55N10TM - SMD N channel transistors

FQB55N10TM
Description

Transistor: N-MOSFET; unipolar; 100V; 38.9A; 155W; D2PAK

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology QFET®
Polarisation unipolar
Drain-source voltage 100V
Drain current 38.9A
Power dissipation 155W
Case D2PAK
Gate-source voltage ±25V
On-state resistance 26mΩ
Mounting SMD
Gate charge 98nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat