FQB34P10TM - SMD P channel transistors

FQB34P10TM
Description

Transistor: P-MOSFET; unipolar; -100V; -23.5A; 155W; D2PAK

Specifications
Manufacturer ONSEMI
Type of transistor P-MOSFET
Technology QFET®
Polarisation unipolar
Drain-source voltage -100V
Drain current -23.5A
Power dissipation 155W
Case D2PAK
Gate-source voltage ±25V
On-state resistance 60mΩ
Mounting SMD
Gate charge 110nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat